Method for fabricating a semiconductor device having a semiconductive resistor structure
US7985639B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2009 |
| Grant date | Jul 26, 2011 |
| Priority date | — |
| Expiry date | Jan 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
Abstract
Methods are provided for fabricating a semiconductor device. A method forms a conductive fin arrangement on a first region of a semiconductor substrate. The method continues by forming a semiconductive resistor structure on a second region of the semiconductor substrate after forming the conductive fin arrangement, and forming a gate stack foundation structure overlying the conductive fin arrangement after forming the semiconductive resistor structure. The method removes portions of the gate stack foundation structure overlying the first region of the semiconductor substrate to define a gate structure for the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.