Method of making a contact in a semiconductor device
US7985676B2 · kind B2 · utility
7Cited by
12References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2010 |
| Grant date | Jul 26, 2011 |
| Priority date | — |
| Expiry date | Jan 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To form a semiconductor device, an insulating layer is formed over a conductive region and a pattern transfer layer is formed over the insulating layer. The pattern transfer layer is patterned in the reverse tone of a layout of recesses to be formed in the insulating layer such that the pattern transfer layer remains over regions where the recesses are to be formed. A mask material is formed over the insulating layer and is aligned with the pattern transfer layer. Remaining portions of the pattern transfer layer are removed and recesses are etched in the insulating layer using the mask material as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.