Method of forming aluminum-doped metal carbonitride gate electrodes
US7985680B2 · kind B2 · utility
3Cited by
11References
20Claims
0Family size
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Key dates
| Filing date | Aug 25, 2008 |
| Grant date | Jul 26, 2011 |
| Priority date | — |
| Expiry date | Mar 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an aluminum-doped metal (tantalum or titanium) carbonitride gate electrode for a semiconductor device is described. The method includes providing a substrate containing a dielectric layer thereon, and forming the gate electrode on the dielectric layer in the absence of plasma. The gate electrode is formed by depositing a metal carbonitride film, and adsorbing an atomic layer of an aluminum precursor on the metal carbonitride film. The steps of depositing and adsorbing may be repeated a desired number of times until the aluminum-doped metal carbonitride gate electrode has a desired thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.