Patterning 3D features in a substrate
US7985689B2 · kind B2 · utility
7Cited by
3References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2007 |
| Grant date | Jul 26, 2011 |
| Priority date | — |
| Expiry date | Jul 27, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/4214
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methods of forming a 3D structure in a substrate are disclosed. A layer of resist is deposited on the substrate. The layer of resist is patterned to define an edge at a predetermined location. The resist is reflowed to form a tapered region extending from the etch. Both the reflowed resist and the substrate are concurrently etched to transfer the tapered profile of the reflowed resist into the underlying substrate to form an angled surface. The etching is discontinued before all of the resist is consumed by the etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.