Patent · US Active

Power semiconductor module and method for producing the same

US7986034B2 · kind B2 · utility

3Cited by

11References

29Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Alfred Kemper · Warstein, DE
Guido Strotmann · Uchte, DE

Key dates

Filing date	Mar 21, 2008
Grant date	Jul 26, 2011
Priority date	—
Expiry date	Jan 29, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH05K2203/0285
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a power semiconductor module including forming a contact between a contact region and a contact element as an ultrasonic welding contact via a sonotrode. The ultrasonic welding operation also being used for joining the contact regions with the contact ends and consequently for joining the contacts and the foot regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.