Patent · US Active

Processing multilayer semiconductors with multiple heat sources

US7986871B2 · kind B2 · utility

1Cited by

21References

18Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Sundar Ramamurthy · Fremont, US
Andreas Hegedus · Burlingame, US
Randhir P. S. Thakur · Boise, US

Key dates

Filing date	Sep 17, 2008
Grant date	Jul 26, 2011
Priority date	—
Expiry date	Mar 18, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/67103
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of adjusting the heat transfer properties within a processing chamber is presented. Chamber properties may be determined and adjusted by adjusting the thermal mass of an edge ring disposed in the processing chamber.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.