Patent · US Active

Semiconductor die singulation method

US7989319B2 · kind B2 · utility

53Cited by
21References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 18, 2010
Grant dateAug 2, 2011
Priority date—
Expiry dateJan 18, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/78
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In one embodiment, semiconductor die are singulated from a semiconductor wafer by etching openings completely through the semiconductor wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.