Sample inspection apparatus
US7989766B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2009 |
| Grant date | Aug 2, 2011 |
| Priority date | — |
| Expiry date | Jan 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2803
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A sample inspection apparatus in which a fault in a semiconductor sample can be measured and analyzed efficiently. A plurality of probes are brought into contact with the sample. The sample is irradiated with an electron beam while a current flowing through the probes is measured. Signals from at least two probes are supplied to an image processing unit so as to form an absorbed electron current image. A difference between images obtained in accordance with a temperature change of the sample is obtained. A faulty point is identified from the difference between the images.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.