Semiconductor device with a field stop zone and process of producing the same

US7989888B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Hans-Joachim Schulze · Taufkirchen, DE
• Frank Pfirsch · Birkenfeld, DE
• Stephan Voss · Munich, DE
• Franz-Josef Niedernostheide · Hagen am Teutoburger Wald, DE

Key dates

• Filing date: Aug 31, 2006
• Grant date: Aug 2, 2011
• Expiry date: Oct 11, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/834

Abstract

Embodiments discussed herein relate to processes of producing a field stop zone within a semiconductor substrate by implanting dopant atoms into the substrate to form a field stop zone between a channel region and a surface of the substrate, at least some of the dopant atoms having energy levels of at least 0.15 eV below the energy level of the conduction band edge of semiconductor substrate; and laser annealing the field stop zone.