Gate structure, and semiconductor device having a gate structure
US7989892B2 · kind B2 · utility
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1References
9Claims
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Key dates
| Filing date | Jun 12, 2009 |
| Grant date | Aug 2, 2011 |
| Priority date | — |
| Expiry date | Nov 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gate structure can include a polysilicon layer, a metal layer on the polysilicon layer, a metal silicide nitride layer on the metal layer and a silicon nitride mask on the metal silicide nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.