Immunity of phase change material to disturb in the amorphous phase
US7990761B2 · kind B2 · utility
5Cited by
16References
76Claims
0Family size
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Key dates
| Filing date | Mar 31, 2008 |
| Grant date | Aug 2, 2011 |
| Priority date | — |
| Expiry date | Sep 25, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.