Techniques for temperature controlled ion implantation
US7993698B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2006 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Apr 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2001
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.