Silicon-ozone CVD with reduced pattern loading using incubation period deposition
US7994019B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2010 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Sep 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Aspects of the disclosure pertain to methods of depositing conformal silicon oxide layers on patterned substrates. In embodiments, dielectric layers are deposited by flowing a silicon-containing precursor and ozone into a processing chamber such that a relatively uniform dielectric growth rate is achieved across the patterned substrate surface having heterogeneous materials and/or a heterogeneous pattern density distribution. The deposition of dielectric layers grown according to embodiments may have a reduced dependence on underlying material and pattern density while still being suitable for non-sacrificial applications. Reduction in dependence on pattern density is achieved by terminating deposition near the end of an incubation period. Multiple deposition cycles may be conducted in series since the beneficial nature of the incubation period may repeat after a pause in deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.