Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
US7994108B2 · kind B2 · utility
8Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2006 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Jan 9, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/091
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high-efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.