Method of programming resistivity changing memory
US7995381B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2008 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Nov 9, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0069
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of operating an integrated circuit includes determining a resistance value of at least one resistivity-changing memory cell when the memory cell is in a low-resistance state, the at least one resistivity-changing memory cell configured to be programmable to at least the low-resistance state and a high-resistance state, comparing the resistance value to a threshold value, selecting, based on the comparison, a cell reset process to be employed for programming the at least one resistivity-changing memory cell to the high-resistance state. The selecting includes selecting a predetermined reset process as the cell reset process when the resistance value is less than the threshold value, and adjusting the predetermined process and selecting the adjusted predetermined reset process as the cell reset process when the resistance value is at least equal to the threshold value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.