Patent · US Active

Electron beam enhanced surface wave plasma source

US7998307B2 · kind B2 · utility

8Cited by
6References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 12, 2006
Grant dateAug 16, 2011
Priority date
Expiry dateJun 4, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/3233
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A plasma processing system is described for generating plasma with a ballistic electron beam using a surface wave plasma (SWP) source, such as a radial line slot antenna (RLSA) during semiconductor device fabrication. The antenna comprises a resonator plate having a partially open, electrically conductive layer coupled to a surface of the resonator plate. For example, the electrically conductive layer is formed at an interface between the resonator plate and the plasma, and a direct current (DC) voltage is applied to the electrically conductive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.