Particle reduction in PECVD processes for depositing low-k material by using a plasma assisted post-deposition step

US7998882B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Ulrich Mayer · Weißenhorn, DE
• Hartmut Ruelke · Dresden, DE

Key dates

• Filing date: Jun 25, 2009
• Grant date: Aug 16, 2011
• Expiry date: Nov 12, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

When forming dielectric materials of reduced dielectric constant in sophisticated metallization systems, the creation of defect particles on the dielectric material may be reduced during a plasma enhanced deposition process by inserting an inert plasma step after the actual deposition step.