Patent · US Active

Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and control

US7999479B2 · kind B2 · utility

3Cited by
4References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 16, 2009
Grant dateAug 16, 2011
Priority date
Expiry dateApr 21, 2030

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the plasma source. In one embodiment, dual plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.