Mask etch plasma reactor with cathode providing a uniform distribution of etch rate
US8002946B2 · kind B2 · utility
5Cited by
35References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2006 |
| Grant date | Aug 23, 2011 |
| Priority date | — |
| Expiry date | Aug 17, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68785
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma reactor for etching a workpiece such as a rectangular or square mask, includes a vacuum chamber having a ceiling and a sidewall and a workpiece support pedestal within the chamber including a cathode having a surface for supporting a workpiece, the surface comprising plural respective zones, the respective zones of the surface being formed of respective materials of different electrical characteristics. The zones can be arranged concentrically relative to an axis of symmetry of the wafer support pedestal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.