Methods of forming electronic devices by ion implanting
US8003306B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2007 |
| Grant date | Aug 23, 2011 |
| Priority date | — |
| Expiry date | Oct 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an electronic device is provided that includes forming a resist layer over a substrate having a first region, a second region, and a third region. The method further includes directing radiation through a reticle, wherein the reticle comprises different radiation zones having significantly different transmission values with respect to each other, and the first region is exposed to a significantly different amount of radiation as compared to the second region. The method also includes removing part of the resist layer to leave a remaining portion such that the second region of the resist layer is significantly thinner than the third region of the resist layer, and then ion implanting the substrate while the remaining portion of the resist layer overlies the substrate to form a first implant region and a second implant region having different depths.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.