Patent · US Active

Method of forming a bi-directional diode and structure therefor

US8003478B2 · kind B2 · utility

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Key dates

Filing dateJun 6, 2008
Grant dateAug 23, 2011
Priority date—
Expiry dateNov 15, 2029

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/983

Abstract

In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.