Device and manufacturing method

US8003515B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thorsten Meyer · Regensburg, DE
• Andreas Bahr · Pfronten, DE

Key dates

• Filing date: Sep 18, 2009
• Grant date: Aug 23, 2011
• Expiry date: Sep 18, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3025
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A description is given of a device, including a semiconductor chip, a first metal layer laterally extending over the semiconductor chip, the first metal layer having a first thickness. A dielectric layer laterally extends over the first metal layer, and a second metal layer laterally extends over the dielectric layer, the second metal layer having a second thickness that is at least four times larger than the first thickness.