Method of forming an electronic device including forming features within a mask and a selective removal process
US8003545B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2008 |
| Grant date | Aug 23, 2011 |
| Priority date | — |
| Expiry date | Jan 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an electronic device can include forming a patterned mask layer overlying a underlying layer such that the mask layer has a first feature, a second feature, and a third feature, and the first feature is between the second feature and the third feature. The first feature can be spaced apart from the second feature by a first opening in the mask layer, and can be spaced apart from the third feature by a second opening in the mask layer. The method can further include selectively removing portions of the underlying layer under the first opening, the second opening, the second feature, and the third feature, and also removing the second feature and the third feature while leaving substantially all of the first feature and a significant portion of the underlying layer under the first feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.