Silicon carbide MOS field effect transistor with built-in Schottky diode and method for fabrication thereof
US8003991B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2006 |
| Grant date | Aug 23, 2011 |
| Priority date | — |
| Expiry date | Dec 27, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
This invention has a cell incorporating a built-in Schottky diode region disposed in at least part of an elementary cell that constitutes an SiC vertical MOSFET provided in a low-density p-type deposit film with a channel region and a base region inverted to an n-type by ion implantation. This built-in Schottky diode region has built therein a Schottky diode of low on-resistance that is formed of a second deficient pan disposed in a high-density gate layer, a second n-type base layer penetrating a low-density p-type deposit layer formed thereon, reaching an n-type drift layer of the second deficient part and attaining its own formation in consequence of inversion of the p-type deposit layer into an n-type by the ion implantation of an n-type impurity from the surface, and a source electrode connected in the manner of forming a Schottky barrier to the surface-exposed part of the second n-type base layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.