Crack stop and moisture barrier
US8004066B2 · kind B2 · utility
14Cited by
9References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2010 |
| Grant date | Aug 23, 2011 |
| Priority date | — |
| Expiry date | Apr 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A design for a crack stop and moisture barrier for a semiconductor device includes a plurality of discrete conductive features formed at the edge of an integrated circuit proximate a scribe line. The discrete conductive features may comprise a plurality of staggered lines, a plurality of horseshoe-shaped lines, or a combination of both.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.