Semiconductor device and method of forming interconnect structure for encapsulated die having pre-applied protective layer
US8004095B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2010 |
| Grant date | Aug 23, 2011 |
| Priority date | — |
| Expiry date | Jun 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10674
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a protective layer formed over an active surface of a semiconductor wafer. The semiconductor die with pre-applied protective layer are moved from the semiconductor wafer and mounted on a carrier. The semiconductor die and contact pads on the carrier are encapsulated. The carrier is removed. A first insulating layer is formed over the pre-applied protective layer and contact pads. Vias are formed in the first insulating layer and pre-applied protective layer to expose interconnect sites on the semiconductor die. An interconnect structure is formed over the first insulating layer in electrical contact with the interconnect sites on the semiconductor die and contact pads. The interconnect structure has a redistribution layer formed on the first insulating layer, a second insulating layer formed on the redistribution layer, and an under bump metallization layer formed over the second dielectric in electrical contact with the redistribution layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.