Zinc oxide based transparent electric conductor, sputtering target for forming of the conductor and process for producing the target
US8007693B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2007 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Jun 1, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/658
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided is a zinc oxide transparent electric conductor having zinc oxide (ZnO) as its principal component, containing an element to become an n-type dopant to zinc oxide, containing metal M in which P(P=(G+H mix)/RT, wherein G is the Gibbs free energy at temperature T of the metal, H mix is the mixing enthalpy at temperature T of zinc oxide and the metal, R is the gas constant, and T is the temperature) as a parameter showing the wettability with zinc oxide is 6 or less and in which its resistivity is smaller than the resistivity of zinc oxide added with the n-type dopant, and wherein concentration of metal M in relation to the total atomicity of zinc and the n-type dopant and metal M, which are all metal atoms configuring the zinc oxide transparent electric conductor, is 0.05 to 2.0 at %. In the development of a transparent electric conductor that does not contain raw material In which is expensive and with concern of resource depletion, provided is a low resistivity transparent electric conductor by exceeding the limits of the conventional development technique of the single dopant method, presenting guidelines for selecting a secondary additive material effective in achieving l…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.