Methods for fabricating contacts to pillar structures in integrated circuits

US8008095B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Solomon Assefa · Ossining, US
• Gregory Costrini · Hopewell Junction, US
• Christopher V. Jahnes · Upper Saddle River, US
• Michael J. Rooks · Briarcliff Manor, US
• Jonathan Zanhong Sun · Yorktown Heights, US

Key dates

• Filing date: Oct 3, 2007
• Grant date: Aug 30, 2011
• Expiry date: Dec 19, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/01

Abstract

A pillar structure that is contacted by a vertical contact is formed in an integrated circuit. A hard mask is formed and utilized to pattern a least a portion of the pillar structure. The hard mask comprises carbon. Subsequently, the hard mask is removed. A conductive material is then deposited in a region previously occupied by the hard mask to form the vertical contact. The hard mask may, for example, comprise diamond-like carbon. The pillar structure may have a width or diameter less than about 100 nanometers.