Method to create a metal pattern using a damascene-like process
US8008196B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2008 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Jun 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a metal pattern on a dielectric layer that comprises forming at least one trench in a dielectric layer formed from a photosensitive, insulative material is disclosed. A conformed metal layer is formed over the dielectric layer and into the at least one trench and a photoresist layer is formed over the metal layer. The photoresist layer may be deposited so that a photoresist material fills the at least one trench. At least a portion of the photoresist layer is selectively removed. For instance, portions of the photoresist layer surrounding the at least one trench may be removed while a portion of the photoresist layer remains therein. At least a portion of the metal layer is selectively removed, such as portions of the metal layer surrounding the at least one trench. The photoresist layer remaining in the at least one trench may subsequently be removed. Intermediate semiconductor device structures are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.