Method of cleaning and forming a negatively charged passivation layer over a doped region
US8008208B2 · kind B2 · utility
8Cited by
0References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2010 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Dec 7, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention generally provides a method of forming a high efficiency solar cell device by preparing a surface and/or forming at least a part of a high quality passivation layer on a silicon containing substrate. Embodiments of the present invention may be especially useful for preparing a surface of a p-type doped region formed on a silicon substrate so that a high quality passivation layer can be formed thereon. In one embodiment, the methods include exposing a surface of the solar cell substrate to a plasma to clean and modify the physical, chemical and/or electrical characteristics of the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.