Vertical SOI trench SONOS cell

US8008713B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• David M. Dobuzinsky · New Windsor, US
• Herbert L. Ho · New Windsor, US
• Jack A. Mandelman · Stormville, US
• Yoichi Otani · Radeberg, DE

Key dates

• Filing date: Mar 25, 2009
• Grant date: Aug 30, 2011
• Expiry date: Feb 25, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/693
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor memory device in which a vertical trench semiconductor-oxide-nitride-oxide-semiconductor (SONOS) memory cell is created in a semiconductor-on-insulator (SOI) substrate is provided that allows for the integration of dense non-volatile random access memory (NVRAM) cells in SOI-based complementary metal oxide semiconductor (CMOS) technology. The trench is processed using conventional trench processing and it is processed near the beginning of the inventive method that allows for the fabrication of the memory cell to be fully separated from SOI logic processing.