Selective STI stress relaxation through ion implantation
US8008744B2 · kind B2 · utility
1Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 31, 2010 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | May 31, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/8311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first example embodiment comprises the following steps and the structure formed therefrom. A trench having opposing sidewalls is formed within a substrate. A stress layer having an inherent stress is formed over the opposing trench sidewalls. The stress layer having stress layer sidewalls over the trench sidewalls. Ions are implanted into one or more portions of the stress layer to form ion-implanted relaxed portions with the portions of the stress layer that are not implanted are un-implanted portions, whereby the inherent stress of the one or more ion-implanted relaxed portions of stress layer portions is relaxed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.