Semiconductor device, manufacturing method thereof, composite metal body and manufacturing method thereof
US8008772B2 · kind B2 · utility
1Cited by
0References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2008 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Mar 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a structure in which a semiconductor element and a Cu or Ni electrode are connected by way of a bonding layer comprising Cu, and the Cu bonding layer and the Cu or Ni electrode are diffusion-bonded to each other. The bonding layer is formed by conducting bonding in a reducing atmosphere by using a bonding material containing particles of Cu oxide with an average particle size of 1 nm to 50 μm and a reducing agent comprising an organic material, thereby providing excellent bonding strength to Ni or Cu electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.