Magnetic sensing element and method for manufacturing the same
US8009391B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2008 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Jun 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3277
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.