Patent · US Active

Programmable resistance memory

US8009455B2 · kind B2 · utility

6Cited by

1References

16Claims

0Family size

Assignee

Ovonyx Inc. · US

Inventors

Tyler Lowrey · San Jose, US
Carl Schell · Dearborn, US
Wally Czubatyj · Warren, US
Steve Hudgens · Santa Clara, US
Jon Maimon · Manassas, US
Jeff Fournier · Livonia, US
Mike Hennessey · South Lyon, US
Ed Spall · Auburn Hills, US

Key dates

Filing date	Jan 20, 2009
Grant date	Aug 30, 2011
Priority date	—
Expiry date	Oct 29, 2029

Classification

Technology area (CPC G)Physics
CPC primaryG11C13/0035
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.