Advanced process sensing and control using near infrared spectral reflectometry
US8009938B2 · kind B2 · utility
7Cited by
7References
24Claims
0Family size
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Key dates
| Filing date | Feb 29, 2008 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Jul 1, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/40
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Embodiments described herein provide a method and apparatus for obtaining process information in a substrate manufacturing process using plasma. In one embodiment, a chamber is provided having one or more optical metrology modules that are positioned such that optical energy from the plasma process is detected at substantially orthogonal angles. Metrics derived from detected optical energy may be used for endpoint determination, substrate temperature, and monitoring of critical dimensions on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.