Patent · US Active

Methods for controllable doping of aluminum nitride bulk crystals

US8012257B2 · kind B2 · utility

22Cited by

77References

42Claims

0Family size

Assignee

CRYSTAL IS, INC. · US

Inventors

Kenneth E. Morgan · New York, US
Leo J. Schowalter · Latham, US
Glen A. Slack · Scotia, US

Key dates

Filing date	Mar 30, 2007
Grant date	Sep 6, 2011
Priority date	—
Expiry date	Sep 11, 2029

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC04B2235/79
WIPO fieldMaterials, metallurgy
WIPO sectorChemistry

Abstract

Fabrication of doped and undoped stoichiometric polycrystalline AlN ceramics with high purity is accomplished by, for example, reacting Al pellets with nitrogen gas. Such polycrystalline AlN ceramics may be utilized in the fabrication of high purity AlN single crystals, which may be annealed to enhance a conductivity thereof.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.