Method and apparatus for manufacturing a semiconductor
US8016941B2 · kind B2 · utility
6Cited by
3References
15Claims
0Family size
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Key dates
| Filing date | Feb 5, 2007 |
| Grant date | Sep 13, 2011 |
| Priority date | — |
| Expiry date | Nov 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
Abstract
A method and apparatus for crystallizing a semiconductor that includes a first layer having a first crystal lattice orientation and a second layer having a second crystal lattice orientation, comprising amorphizing at least a portion of the second layer, applying a stress to the second layer and heating the second layer above a recrystallization temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.