Organosiloxane materials for selective area deposition of inorganic materials

US8017183B2 · kind B2 · utility

Assignee

• EASTMAN KODAK COMPANY · US

Inventors

• Cheng Yang · Shanghai, CN
• Lyn M. Irving · Rochester, US
• David H. Levy · Rochester, US
• Peter J. Cowdery-Corvan · Webster, US
• Diane C. Freeman · Pittsford, US

Key dates

• Filing date: Sep 26, 2007
• Grant date: Sep 13, 2011
• Expiry date: Jul 13, 2030

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/545
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organosiloxane compound; and patterning the deposition inhibitor material either after or simultaneously with or introducing applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.