Methods of forming metal-insulator-metal (MIM) capacitors with passivation layers on dielectric layers
US8017490B2 · kind B2 · utility
2Cited by
6References
4Claims
0Family size
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Key dates
| Filing date | May 20, 2010 |
| Grant date | Sep 13, 2011 |
| Priority date | — |
| Expiry date | May 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.