Method for fabricating capacitor
US8017491B2 · kind B2 · utility
5Cited by
1References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2007 |
| Grant date | Sep 13, 2011 |
| Priority date | — |
| Expiry date | Jul 4, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
Abstract
A method for fabricating a capacitor includes forming a sacrificial layer having a plurality of trenches on an upper portion of a substrate, forming storage nodes in the trenches, exposing upper portions of the storage nodes by removing a portion of the sacrificial layer, forming supporters to support the exposed upper portions of the storage nodes, removing the sacrificial layer under the supporters, and removing the supporters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.