Patent · US Active

Cleaning residues from semiconductor structures

US8017568B2 · kind B2 · utility

0Cited by

13References

4Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Shan Clark · Hattiesburg, US
Vijayakumar Ramachandrarao · Hillsboro, US
Robert Turkot · Hillsboro, US

Key dates

Filing date	Feb 28, 2003
Grant date	Sep 13, 2011
Priority date	—
Expiry date	Mar 16, 2027

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC11D2111/22
WIPO fieldBasic materials chemistry
WIPO sectorChemistry

Abstract

Supercritical carbon dioxide may be utilized to remove resistant residues such as those residues left when etching dielectrics in fluorine-based plasma gases. The supercritical carbon dioxide may include an oxidizer in one embodiment.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.