Phase change material layers and phase change memory devices including the same

US8017929B2 · kind B2 · utility

Assignee

• SAMSUNG ELECTRONICS CO., LTD. · KR

Inventors

• Youn-seon Kang · Yongin-si, KR
• Daniel Wamwangi · Aachen, DE
• Matthias Wuttig · Aachen, DE
• Ki-Joon Kim · Seoul, KR
• Yoon Ho Khang · Yongin-si, KR
• Cheol Kyu Kim · Seoul, KR
• Dong-Seok Suh · Seoul, KR
• Tae-Yon Lee · Seoul, KR

Key dates

• Filing date: Oct 6, 2008
• Grant date: Sep 13, 2011
• Expiry date: Dec 16, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/884

Abstract

A phase change material layer includes antimony (Sb) and at least one of indium (In) and gallium (Ga). A phase change memory device includes a storage node including a phase change material layer and a switching device connected to the storage node. The phase change material layer includes Sb and at least one of In and Ga.