Low cost multi-state magnetic memory
US8018011B2 · kind B2 · utility
28Cited by
13References
26Claims
0Family size
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Key dates
| Filing date | Sep 24, 2007 |
| Grant date | Sep 13, 2011 |
| Priority date | — |
| Expiry date | Nov 4, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5607
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A multi-state current-switching magnetic memory element has a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.