Rajiv Yadav Ranjan
177Patents
22h-index
120Co-inventors
93Inventor score
Filing activity: Jul 24, 1989 → Jan 12, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5062021A | Selectively textured magnetic recording media | Emerging Cross-Sectional Technologies | 163 | Expired |
| US8574928B2 | MRAM fabrication method with sidewall cleaning | Electricity | 124 | Active |
| US8535952B2 | Method for manufacturing non-volatile magnetic memory | Electricity | 117 | Active |
| US5108781A | Process for manufacturing selectively textured magnetic recording media | Physics | 91 | Expired |
| US8422286B2 | Low-crystallization temperature MTJ for spin-transfer torque magnetic random access memory (STTMRAM) | Emerging Cross-Sectional Technologies | 81 | Active |
| US8120949B2 | Low-cost non-volatile flash-RAM memory | Electricity | 74 | Active |
| US6013161A | Thin film magnetic alloy having low noise, high coercivity and high squareness | Emerging Cross-Sectional Technologies | 74 | Expired |
| US5507930A | Method of sputtering a carbon protective film on a magnetic disk by superimposing an AC voltage on a DC bias voltage | Physics | 67 | Expired |
| US8802451B2 | Method for manufacturing high density non-volatile magnetic memory | Physics | 58 | Active |
| US8542524B2 | Magnetic random access memory (MRAM) manufacturing process for a small magnetic tunnel junction (MTJ) design with a low programming current requirement | Electricity | 42 | Active |
| US6120890A | Magnetic thin film medium comprising amorphous sealing layer for reduced lithium migration | Emerging Cross-Sectional Technologies | 42 | Expired |
| US8477530B2 | Non-uniform switching based non-volatile magnetic based memory | Electricity | 40 | Active |
| US9166154B2 | MTJ stack and bottom electrode patterning process with ion beam etching using a single mask | Electricity | 39 | Active |
| US9196332B2 | Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer | Electricity | 36 | Active |
| US8508984B2 | Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof | Electricity | 31 | Active |
| US5820963A | Method of manufacturing a thin film magnetic recording medium having low MrT value and high coercivity | Emerging Cross-Sectional Technologies | 29 | Expired |
| US8779537B2 | Spin transfer torque magnetic random access memory (STTMRAM) having graded synthetic free layer | Electricity | 28 | Active |
| US8018011B2 | Low cost multi-state magnetic memory | Physics | 28 | Active |
| US5658659A | Magnetic alloy and method for manufacturing same | Emerging Cross-Sectional Technologies | 23 | Expired |
| US6667118B1 | Texture-induced magnetic anisotropy of soft underlayers for perpendicular recording media | Emerging Cross-Sectional Technologies | 23 | Expired |
| US7175925B2 | Perpendicular magnetic recording media with improved crystallographic orientations and method of manufacturing same | Physics | 23 | Expired |
| US8183652B2 | Non-volatile magnetic memory with low switching current and high thermal stability | Electricity | 22 | Active |
| US8084835B2 | Non-uniform switching based non-volatile magnetic based memory | Electricity | 22 | Active |
| US8374025B1 | Spin-transfer torque magnetic random access memory (STTMRAM) with laminated free layer | Electricity | 21 | Active |
| US8593862B2 | Spin-transfer torque magnetic random access memory having magnetic tunnel junction with perpendicular magnetic anisotropy | Electricity | 20 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.