Creating multi-layer/multi-input/multi-output (MLMIMO) models for metal-gate structures
US8019458B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2008 |
| Grant date | Sep 13, 2011 |
| Priority date | — |
| Expiry date | Feb 23, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/924
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
The invention provides a method of processing a wafer using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more measurement procedures, one or more Poly-Etch (P-E) sequences, and one or more metal-gate etch sequences. The MLMIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple process steps. The multiple layers and/or the multiple process steps can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using isotropic and/or anisotropic etch processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.