Surface treatment method, etching method, and method for manufacturing electronic device
US8021565B2 · kind B2 · utility
1Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | Mar 24, 2008 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | Jul 21, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A surface treatment method includes: removing a fluorocarbon-containing reaction product from a surface of a workpiece by oxygen gas plasma processing. The workpiece includes a plurality of layers. The fluorocarbon-containing reaction product is deposited by successively etching the layers of the workpiece. The method further includes after removing the reaction product, removing an oxide-containing reaction product from the surface of the workpiece using hydrogen fluoride gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.