Methods of fabricating a cross point memory array

US8021897B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Scott E. Sills · Boise, US
• Gurtej S. Sandhu · Boise, US

Key dates

• Filing date: Feb 19, 2009
• Grant date: Sep 20, 2011
• Expiry date: Dec 5, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B63/80

Abstract

Some embodiments include cross-point memory structures. The structures may include a line of first electrode material extending along a first horizontal direction, a multi-sided container of access device materials over the first electrode material, a memory element material within the multi-sided container, and a line of second electrode material over the memory element material and extending along a second horizontal direction that is orthogonal to the first horizontal direction. Some embodiments include methods of forming memory arrays. The methods may include forming a memory cell stack over a first electrode material, and then patterning the first electrode material and the memory cell stack into a first set of spaced lines extending along a first horizontal direction. Spaced lines of second electrode material may be formed over the first set of spaced lines, and may extend along a second horizontal direction that is orthogonal to the first horizontal direction.