Method and apparatus for thermally enhanced semiconductor package
US8021907B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2008 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | Aug 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor package includes a semiconductor die. Encapsulant is flowed around a portion of the semiconductor die. The encapsulant is etched and a conductive material is deposited into the etched portion of the encapsulant to form a thermally conductive structure. In one embodiment, a trench is etched into the encapsulant and a thermally conductive material is deposited into the trench to form a thermal channel. In alternative embodiments, thermally conductive through hole vias (THVs) are formed in the encapsulant. A thermally conductive pad may be formed over the semiconductor die to facilitate removal of heat energy from the hot spots of the semiconductor die. A thermally conductive trace is formed to interconnect the thermal channel and the thermally conductive pad. A heat sink may be deposited over the semiconductor package. The packages are singulated by cutting through the encapsulant or the thermal channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.