Patent · US Active

Gate structure and method

US8021990B2 · kind B2 · utility

7Cited by
6References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 9, 2009
Grant dateSep 20, 2011
Priority date—
Expiry dateSep 1, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/85
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A MOSFET structure including silicate gate dielectrics with nitridation treatments of the gate dielectric prior to gate material deposition.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.